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| Part Number | Configuration | Type | VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON)(mΩ) | RDS(ON)(mΩ) | Ciss (pF) |
Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | ||||
| WSD3069DN56 | N+P | N-Ch | 30 | 20 | 16 | 15 | 19.5 | - | - | 18 | 24 | - | - | - | - | 373 | DFN5X6-8L |
| P-Ch | -30 | 20 | -16 | 15 | 20 | - | - | 20 | 27 | - | - | - | - | 1040 | |||
The WSD3069DN56 MOSFET is optimized for use in motor systems, automotive electronics, and various small household appliances.
It features an N+P-channel configuration integrated into a compact DFN5X6-8L package.
The device supports a drain-source voltage (VDS) of ±30V and a continuous drain current (ID) of ±16A.
Both channels exhibit an RDS(ON) resistance of 15mΩ at standard measurement conditions (typ. 19.5mΩ for N-Ch and 20mΩ for P-Ch @10V).
The typical input capacitance is 373pF for the N-channel and 1040pF for the P-channel.
Yes, WSD3069DN56 is commonly cross-referenced and can be used as an alternative option for PDC3701T specifications.
