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The WSD3023DN56 is the highest performance trench N-channel and P-channel MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSD3023DN56 meets the RoHS and Green Product requirements, featuring 100% EAS guarantee with full function reliability approval.
| Symbol | Parameter | Rating | Units | |
|---|---|---|---|---|
| N-Ch | P-Ch | |||
| VDS | Drain-Source Voltage | 30 | -30 | V |
| VGS | Gate-Source Voltage | ±20 | ±20 | V |
| ID | Continuous Drain Current, VGS(NP)=10V, Ta=25℃ | 14* | -12 | A |
| Continuous Drain Current, VGS(NP)=10V, Ta=70℃ | 7.6 | -9.7 | A | |
| IDP a | Pulse Drain Current Tested, VGS(NP)=10V | 48 | -48 | A |
| EAS c | Avalanche Energy, Single pulse, L=0.5mH | 20 | 20 | mJ |
| IAS c | Avalanche Current, Single pulse, L=0.5mH | 9 | -9 | A |
| PD | Total Power Dissipation, Ta=25℃ | 5.25 | 5.25 | W |
| TSTG | Storage Temperature Range | -55 to 175 | -55 to 175 | ℃ |
| TJ | Operating Junction Temperature Range | 175 | 175 | ℃ |
| RqJA b | Thermal Resistance-Junction to Ambient, Steady State | 60 | 60 | ℃/W |
| RqJC | Thermal Resistance-Junction to Case, Steady State | 6.25 | 6.25 | ℃/W |
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250uA | 30 | --- | --- | V |
| RDS(ON)d | Static Drain-Source On-Resistance | VGS=10V, ID=8A | --- | 14 | 18.5 | mΩ |
| VGS=4.5V, ID=5A | --- | 17 | 25 | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS, ID=250uA | 1.3 | 1.8 | 2.3 | V |
| IDSS | Drain-Source Leakage Current | VDS=20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=20V, VGS=0V, TJ=85℃ | --- | --- | 30 | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| Rg | Gate Resistance | VDS=0V, VGS=0V, f=1MHz | --- | 1.7 | 3.4 | Ω |
| Qge | Total Gate Charge | VDS=15V, VGS=4.5V, IDS=8A | --- | 5.2 | --- | nC |
| Qgse | Gate-Source Charge | --- | 1.0 | --- | ||
| Qgde | Gate-Drain Charge | --- | 2.8 | --- | ||
| Td(on)e | Turn-On Delay Time | VDD=15V, RL=15R, IDS=1A, VGEN=10V, RG=6R. | --- | 6 | --- | ns |
| Tre | Rise Time | --- | 8.6 | --- | ||
| Td(off)e | Turn-Off Delay Time | --- | 16 | --- | ||
| Tfe | Fall Time | --- | 3.6 | --- | ||
| Cisse | Input Capacitance | VDS=15V, VGS=0V, f=1MHz | --- | 545 | --- | pF |
| Cosse | Output Capacitance | --- | 95 | --- | ||
| Crsse | Reverse Transfer Capacitance | --- | 55 | --- |
