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The voltage of WSD6034DN33 MOSFET is 60V/-60V, the current is 15A/-10A, and the resistance is 35mΩ. It features an N+P channel configuration packaged in a compact DFN3X3-8L structure.
| Part number | Configuration | Type | VDS (V) | VGS ±(V) | ID (A) | RDS(ON)(mΩ) Max. / Typ. | RDS(ON)(mΩ) Max. / Typ. | Ciss (pF) | Package | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| @10V | @6V | @4.5V | @2.5V | @1.8V | |||||||||||||
| Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | Max. | Typ. | ||||
| WSD6034DN33 | N+P | N-Ch | 60 | 20 | 15 | 35 | 40 | - | - | 40 | 48 | - | - | - | - | 400 | DFN3X3-8L |
| P-Ch | -60 | 20 | -10 | 80 | 93 | - | - | 100 | 128 | - | - | - | - | 455 | |||
WSD6034DN33 is a complementary N+P channel MOSFET, combining both N-Channel and P-Channel transistors within a single package.
The N-channel supports a drain-source voltage (VDS) of 60V and a continuous drain current (ID) of 15A. The P-channel supports a VDS of -60V and a drain current of -10A.
The device comes in a space-saving, low-profile DFN3X3-8L package, which is ideal for compact and high-density design layouts.
The typical RDS(ON) of the N-channel is 35mΩ at a gate-source voltage (VGS) of 10V, and 40mΩ at 4.5V.
It is highly optimized for use in electronic cigarettes, wireless chargers, car chargers, motor controllers, digital products, small appliances, and general consumer electronics.
