The WSD23N10DN33 is a high-performance MOSFET offering reliable power management with dual-channel configuration in a compact footprint. Detailed technical parameters and primary applications are structured below.
🛠️ Main Applications
E-cigarette
Wireless charger
Motor
Drone
Medical
Car charger
Controller
Digital products
Small appliances
Consumer electronics
📊 Technical Specifications
| Part number |
Configuration |
Type |
VDS (V) |
VGS ±(V) |
ID (A) |
RDS(ON) (mΩ) |
RDS(ON) (mΩ) |
Ciss (pF) |
Package |
| @10V |
@6V |
@4.5V |
@2.5V |
@1.8V |
|
|
|
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
Typ. |
Max. |
|
| WSD23N10DN33 |
N+P |
N-Ch |
100 |
20 |
15 |
100 |
110 |
- |
- |
110 |
150 |
- |
- |
- |
- |
445 |
DFN3X3-8L |
| P-Ch |
-100 |
20 |
-12 |
150 |
180 |
- |
- |
170 |
210 |
- |
- |
- |
- |
700 |
❓ Frequently Asked Questions (FAQ)
Q:
What are the basic voltage and current ratings of WSD23N10DN33?
The WSD23N10DN33 MOSFET operates with a voltage rating of 100V for the N-channel and -100V for the P-channel. The rated current is 15A for the N-channel and -12A for the P-channel.
Q:
What configuration and package does this MOSFET use?
It utilizes an N+P complementary channel configuration housed inside a compact and thermally efficient DFN3X3-8L package.
Q:
What is the typical resistance value of WSD23N10DN33?
The device has an RDS(ON) resistance of 100mΩ (typical) for the N-channel at a gate-source voltage (VGS) of 10V.
Q:
Which electronic devices are suitable for WSD23N10DN33?
This MOSFET is suitable for applications such as E-cigarettes, wireless chargers, motors, drones, medical systems, car chargers, controllers, digital products, small appliances, and consumer electronics.
Q:
What is the input capacitance (Ciss) for both channels?
The typical input capacitance (Ciss) is 445pF for the N-channel and 700pF for the P-channel.
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